ANSI/IEEE 1596.3-1996 可量测相干接口(SCI)用低压差动信号(LVDS)
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【英文标准名称】:LowVoltageDifferentialSignals(LVDS)forScalableCoherentInterface(SCI)
【原文标准名称】:可量测相干接口(SCI)用低压差动信号(LVDS)
【标准号】:ANSI/IEEE1596.3-1996
【标准状态】:作废
【国别】:美国
【发布日期】:1996
【实施或试行日期】:
【发布单位】:美国国家标准学会(ANSI)
【起草单位】:
【标准类型】:()
【标准水平】:()
【中文主题词】:界面;低电压
【英文主题词】:interfaces;lowvoltage
【摘要】:
【中国标准分类号】:M14
【国际标准分类号】:35_200
【页数】:
【正文语种】:英语
【英文标准名称】:StandardGuideforNeutronIrradiationofUnbiasedElectronicComponents
【原文标准名称】:未加偏压的电子元件的中子照射标准指南
【标准号】:ASTMF1190-1999(2005)
【标准状态】:现行
【国别】:
【发布日期】:1999
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Practice)
【标准水平】:()
【中文主题词】:辐照;电子设备及元件;电气工程
【英文主题词】:dosimetry;electroniccomponent;equivalentmonoenergeticneutronfluence;fastburstreactor(FBR);galliumarsenide;gammadose;gammaeffects;irradiation;neutronfluence;neutronflux;nickel;1MeVequivalentfluence;radiation;reactor;
【摘要】:Semiconductordevicesarepermanentlydamagedbyreactorspectrumneutrons.Theeffectofsuchdamageontheperformanceofanelectroniccomponentcanbedeterminedbymeasuringthecomponentelectricalcharacteristicsbeforeandafterexposuretofastneutronsintheneutronfluencerangeofinterest.Theresultingdatacanbeutilizedinthedesignofelectroniccircuitsthataretolerantofthedegradationexhibitedbythatcomponent.Thisguideprovidesamethodbywhichtheexposureofsiliconandgalliumarsenidesemiconductordevicestoneutronirradiationmaybeperformedinamannerthatisrepeatableandwhichwillallowcomparisontobemadeofdatatakenatdifferentfacilities.Forsemiconductorsotherthansiliconandgalliumarsenide,thisguideprovidesamethodthatcanimproveconsistencyinthemeasurementsandassurancethatdatafromvariousfacilitiescanbecomparedonthesameequivalencefluencescalewhentheapplicablevalidated1-MeVdamagefunctionsarecodifiedinNationalstandards.Intheabsenceofavalidated1-MeVdamagefunction,thenon-ionizingenergyloss(NIEL)asafunctionincidentneutronenergy,normalizedtotheNIELat1MeV,maybeusedasanapproximation.SeePracticeE722foradescriptionofthemethod.1.1Thisguidestrictlyappliesonlytotheexposureofunbiasedsilicon(SI)orgalliumarsenide(GaAs)semiconductorcomponents(integratedcircuits,transistors,anddiodes)toneutronradiationfromanuclearreactorsourcetodeterminethepermanentdamageinthecomponents.Validated1-MeVdamagefunctionscodifiedinNationalStandardsarenotcurrentlyavailableforothersemiconductormaterials.1.2Elementsofthisguidewiththedeviationsnotedmayalsobeapplicabletotheexposureofsemiconductorscomprisedofothermaterialsexceptthatvalidated1-MeVdamagefunctionscodifiedinNationalstandardsarenotcurrentlyavailable.1.3Onlytheconditionsofexposureareaddressedinthisguide.Theeffectsofradiationonthetestsampleshouldbedeterminedusingappropriateelectricaltestmethods.1.4Thisguideaddressesthoseissuesandconcernspertainingtoirradiationswithreactorspectrumneutrons.1.5Systemandsubsystemexposuresandtestmethodsarenotincludedinthisguide.1.6Thisguideisapplicabletoirradiationsconductedwiththereactoroperatingineitherthepulsedorsteady-statemode.Therangeofinterestforneutronfluenceindisplacementdamagesemiconductortestingrangefromapproximately109to1016n/cm2.1.7Thisguidedoesnotaddressneutron-inducedsingleormultipleneutroneventeffectsortransientannealing.1.8ThisguideprovidesanalternativetoTestMethod1017.3,NeutronDisplacementTesting,acomponentofMIL-STD-883andMIL-STD-750.TheDepartmentofDefensehasrestricteduseoftheseMIL-STDstoprogramsexistingin1995andearlier.Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L10
【国际标准分类号】:31_020;31_080_01
【页数】:5P.;A4
【正文语种】:
基本信息
标准名称: | 软磁合金的热处理 恒磁导率合金的热处理 |
中标分类: |
机械 >>
加工工艺 >>
热处理 |
ICS分类: |
机械制造 >>
热处理
|
替代情况: | QJ 1181-87 |
发布日期: | |
实施日期: | |
首发日期: | |
作废日期: | |
出版日期: | |
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所属分类: 机械 加工工艺 热处理 机械制造 热处理